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R8002ANX
l Absolute maximum ratings
Data Sheet
Parameter
Drain - Source voltage slope
Symbol
dv/dt
Conditions
V DS = 480V, I D = 2A
T j = 125°C
Values
50
Unit
V/ns
l Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
R thJC
R thJA
T sold
Min.
-
-
-
Values
Typ.
-
-
-
Max.
3.57
70
265
Unit
°C/W
°C/W
°C
l Electrical characteristics (T a = 25°C)
Parameter
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Symbol
V (BR)DSS
V (BR)DS
Conditions
V GS = 0V, I D = 1mA
V GS = 0V, I D = 2A
Min.
800
-
Values
Typ.
-
900
Max.
-
-
Unit
V
V
V DS = 800V, V GS = 0V
Zero gate voltage
drain current
I DSS
T j = 25°C
-
0.1
100
m A
T j = 125°C
-
-
1000
Gate - Source leakage current
Gate threshold voltage
I GSS
V GS (th)
V GS = ? 30V, V DS = 0V
V DS = 10V, I D = 1mA
-
3
-
-
? 100
5
nA
V
V GS = 10V, I D = 1A
Static drain - source
on - state resistance
R DS(on) *6 T j = 25°C
T j = 125°C
-
-
3.3
6.63
4.3
-
W
Gate input resistance
R G
f = 1MHz, open drain
-
5.9
-
W
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? 2012 ROHM Co., Ltd. All rights reserved.
2/13
2012.10 - Rev.B
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